Wednesday 27 Apr 2005
                   4:00-5:00pm
                  400 Cory Hall
         University of California-Berkeley

contact: johnv@eecs.berkeley.edu
seminar list: http://ptsg.eecs.berkeley.edu/~johnv/seminar.html

Stochastic Heating in RF capacitive discharges.
E. Kawamura (UCB-ERL)

There are two main mechanisms for heating electrons in RF discharges:
ohmic and stochastic heating. Plasma resistivity due to electron-neutral
collisions leads to ohmic heating while momentum transfer from high
voltage moving sheaths leads to stochastic heating. Thus, ohmic heating is
mainly a bulk phenomena while stochastic heating is localized in the
sheaths areas.  In this talk, we try to understand the nature of
stochastic heating and how it depends on various parameters such as
pressure, sheath velocity, frequency and density profiles.